Nino Sepashvili, Zurab Adamia, Kokhreidze and Irakli Nakhutsrishvili
The reaction of oxidation of single-crystalline germanium in water vapor Ge+H2O=GeO+H2 is investigated. In this reaction (Ge+H2O=GeO+H2) the volatile germanium monoxide is formed. The kinetics of the reaction is studied using the microgravimetric method. GeO does not remain on the germanium surface and evaporates immediately. On a silicon substrate located in the cold zone of the reactor, the oxide disproportionate into germanium and its dioxide: 2GeO=Ge+GeO2. The infrared, electronic and Auger spectra of the (Ge+GeO2) films were investigated. The capacitance-voltage characteristics were also measured. Film (Ge+GeO2) creates a good interface with silicon. The breakdown voltage of the film under study reaches ≅2�??107 V/cm, which determines the prospects for its use in semiconductor devices for interlayer isolation.